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BUP400 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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BUP400 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
4 / 8 page Semiconductor Group 4 Jul-31-1996 BUP 400 Power dissipation Ptot = ƒ(TC) parameter: T j ≤ 150 °C 0 20 40 60 80 100 120 °C 160 T C 0 10 20 30 40 50 60 70 80 90 W 110 P tot Collector current IC = ƒ(TC) parameter: V GE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 T C 0 2 4 6 8 10 12 14 16 18 20 22 A 26 I C Safe operating area IC = ƒ(VCE) parameter: D = 0, T C = 25°C , Tj ≤ 150 °C -1 10 0 10 1 10 2 10 A I C 10 0 10 1 10 2 10 3 V V CE DC 10 ms 1 ms 100 µs 10 µs t p = 5.1µs Transient thermal impedance IGBT Zth JC = ƒ(tp) parameter: D = t p / T -3 10 -2 10 -1 10 0 10 1 10 K/W Z thJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
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Similar Description - BUP400 |
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