Q67040-A4230-A2 datasheet(1/8 Pages) SIEMENS

Part #	Q67040-A4230-A2

Description	IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

1

Dec-02-1996

BUP 603D

IGBT With Antiparallel Diode

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Including fast free-wheel diode

Pin 1

Pin 2

Pin 3

G

C

E

Type

VCE

IC

Package

Ordering Code

BUP 603D

600V

42A

TO-218 AB

Q67040-A4230-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCE

600

V

Collector-gate voltage

RGE = 20 kΩ

VCGR

600

Gate-emitter voltage

VGE

± 20

DC collector current, (limited by bond wire)

TC = 60 °C

TC = 90 °C

IC

32

42

A

Pulsed collector current,

tp = 1 ms

TC = 25 °C

TC = 90 °C

ICpuls

64

104

Diode forward current

TC = 90 °C

IF

31

Pulsed diode current,

tp = 1 ms

TC = 25 °C

IFpuls

180

Power dissipation

TC = 25 °C

Ptot

200

W

Chip or operating temperature

Tj

- 55 ... + 150

°C

Storage temperature

Tstg

- 55 ... + 150

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Q67040-A4230-A2 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Q67040-A4230-A2 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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