Electronic Components Datasheet Search |
|
BUZ110S Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
|
BUZ110S Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 8 page Semiconductor Group 1 28/Jan/1998 BUZ 110 S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 Ω TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID 66 80 A Pulsed drain current TC = 25 °C IDpuls 320 Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Ω L = 144 µH, Tj = 25 °C EAS 460 mJ Avalanche current,limited by Tjmax IAR 80 A Avalanche energy,periodic limited by Tjmax EAR 20 mJ Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C dv/dt 6 kV/µs Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 200 W |
Similar Part No. - BUZ110S |
|
Similar Description - BUZ110S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |