BUZ111SL datasheet(3/8 Pages) SIEMENS

Part #	BUZ111SL

Description	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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3 / 8 page

Semiconductor Group

3

28/Jan/1998

BUZ111SL

SPP80N05L

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max = 2 V, ID = 80 A

gfs

30

95

-

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

-

3850

4800

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

-

1090

1357

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

-

570

715

Turn-on delay time

VDD = 30 V, VGS = 4.5 V, ID = 80 A

RG = 1.3 Ω

td(on)

-

30

45

ns

Rise time

VDD = 30 V, VGS = 4.5 V, ID = 80 A

RG = 1.3 Ω

tr

-

37

56

Turn-off delay time

VDD = 30 V, VGS = 4.5 V, ID = 80 A

RG = 1.3 Ω

td(off)

-

70

105

Fall time

VDD = 30 V, VGS = 4.5 V, ID = 80 A

RG = 1.3 Ω

tf

-

36

55

Gate charge at threshold

VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V

Qg(th)

-

3.8

5.7

nC

Gate charge at 5.0 V

VDD = 40 V, ID = 80 A, VGS =0 to 5 V

Qg(5)

-

92

138

Gate charge total

VDD = 40 V, ID = 80 A, VGS =0 to 10 V

Qg(total)

-

155

232

Gate plateau voltage

VDD = 40 V, ID = 80 A

V(plateau)

-

3.4

-

V

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