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SFP3710G Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SFP3710G Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. SFP3710G SFP3710G SFP3710G SFP3710G Rev.A Aug.2010 Silicon N-Channel MOSFET Features � 59A,100V,RDS(on)(Max 18mΩ)@VGS=10V � Ultra-low Gate Charge(Typical 1180nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(175℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for switching regulators, switching convertors, motor and relay drivers , and drivers for high power bipolar switching transistor demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 100 V ID Continuous Drain Current(@Tc=25℃) 59 A Continuous Drain Current(@Tc=100℃) 42 A IDM Drain Current Pulsed (Note1) 240 A VGS Gate to Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note2) 170 mJ EAR Repetitive Avalanche Energy (Note1) 7.4 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 5.8 V/ ns PD Total Power Dissipation(@Tc=25℃) 136 W Derating Factor above 25℃ 1.3 W/℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Maximum lead Temperature for soldering purposes 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 0.92 ℃/W RQCS Thermal Resistance , Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W |
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