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BUZ80A Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ80A Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page Semiconductor Group 8 07/96 BUZ 80A Typ. gate charge VGS = ƒ(QGate) parameter: I D puls = 5 A 0 10 20 30 40 50 nC 65 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 720 740 760 780 800 820 840 860 880 900 920 V 960 V (BR)DSS |
Similar Part No. - BUZ80A |
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