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HITJ0302MP Datasheet(PDF) 5 Page - Renesas Technology Corp |
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HITJ0302MP Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 7 page HITJ0302MP Preliminary R07DS0477EJ0100 Rev.1.00 Page 5 of 6 Jun 22, 2011 Dynamic Input Characteristics Gate Charge Qg (nC) Switching Characteristics Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Input Capacitance vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Source to Drain Voltage VSD (V) Body-Drain Diode Forward Voltage vs. Case Temperature Case Temperature Tc ( °C) 01 2 3 4 5 0 – 20 – 40 – 80 – 60 0 -4 -8 -12 -16 0 – 10 – 20 – 30 10 100 1000 200 360 –10 –5 0 5 10 0 – 0.8 – 0.4 – 1.2 – 1.6 – 2.0 – 0.6 – 1.0 – 0.8 – 0.4 – 0.2 0 – 0.3 – 0.4 – 0.5 – 0.8 – 0.6 – 0.7 – 0.2 25 50 75 100 125 150 ID = –2.2 A Tc = 25°C – 10 V VDD = –10 V – 25 V Pulse Test Tc = 25°C VGS = –10 V –5 V – 1 mA ID = –10 mA VGS = 0 6 VGS = 0 V, 5 V – 100 -20 Crss Coss VGS = 0 V f = 1 MHz Ciss 280 320 240 VDS = 0 V f = 1 MHz VDD = –25 V VGS VDS 1 10 100 1000 – 0.01 – 0.1 – 1 – 10 VDD = –10 V VGS = –10 V Rg = 4.7 Ω PW = 5 μs Tc = 25°C td(on) td(off) tf tr |
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