Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

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W

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WCD8C60

CD8C60

CD8C60

CD8C60

Rev.A Oct.2010

Silicon

Silicon

Silicon

Silicon Controlled

Controlled

Controlled

Controlled Rectifiers

Rectifiers

Rectifiers

Rectifiers

Features

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Repetitive Peak Off-State Voltage:600V

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Low On-State Voltage(1.4(Typ.)@ITM)

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General Description

Standard gate triggering SCR is fully isolated package suitable for the

application where requiring high bidirectional blocking voltage

capability and also suitable for over voltage protection ,motor control

circuit in power tool, inrush current limit circuit and heating control

system.

J

= 25°C unless otherwise specified)

Symbol

Parameter

Value

Units

Repetitive Peak Off-State Voltage

(Note(1)

600

V

Average On-State Current(180° Conduction Angle)

5

A

R.M.S On-State Current(180° Conduction Angle)

8

A

Non Repetitive Surge Peak on-state Current

tp=8.3ms

73

A

tp=10ms

70

tp=8.3ms

24.5

di/dt

Critical rate of rise of on-state current

50

A/㎲

Average Gate Power Dissipation

1

W

Peak Gate Current

4

A

Reverse Peak Gate Voltage

5

V

Isolation Breakdown voltage(R.M..S)

A,C.1minute

1500

V

Junction Temperature

-40~125

°C

Storage Temperature

-40~150

°C

Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may

switch to the on-stage.The rate of rise of current should not exceed15A/µs.

Thermal Characteristics

Symbol

Parameter

Value

Units

Min

Typ

Max

Thermal Resistance Junction to Case

-

-

20

℃/W

Thermal Resistance Junction to Ambient

-

-

70

℃/W