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R2A20112ASP Datasheet(PDF) 5 Page - Renesas Technology Corp |
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R2A20112ASP Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 9 page  R2A20112ASP Preliminary R03DS0047EJ0100 Rev.1.00 Page 5 of 8 Jul 21, 2011 Electrical Characteristics (Ta = 25°C, VCC = 12 V, RT = 33 k , RAMP = 820 pF, TM = 2.2 F, SS = 1.0 F, OCP = GND) Item Symbol Min Typ Max Unit Test Conditions UVLO turn-on threshold Vuvlh 9.8 10.5 11.2 V UVLO turn-off threshold Vuvll 8.8 9.3 9.8 V UVLO hysteresis Hysuvl 0.7 1.2 1.7 V Standby current Istby — 85 170 A VCC = 8.9 V Supply Operating current Icc — 4.2 6.3 mA Output voltage Vref 4.925 5.00 5.075 V Isource = –1 mA Line regulation Vref-line — 5 20 mV Isource = –1 mA Vcc = 10 V to 24 V Load regulation Vref-load — 5 20 mV Isource = –1 mA to –5 mA VREF Temperature stability dVref — 80 — ppm/°C Ta = –40 to +125°C * 1 Feedback voltage Vfb 2.452 2.490 2.528 V FB-COMP short Input bias current Ifb –0.5 –0.3 –0.1 A Measured pin: FB FB = 3 V * 1 Open loop gain Av — 60 — dB * 1 Upper clamp voltage Vclamp-comp 4.2 4.3 4.4 V FB = 2.0 V Low voltage Vl-comp — 0.1 0.3 V FB = 3.0 V Source current Isrc-comp — –120 — A FB = 1.5 V COMP = 2.5 V * 1 Sink current Isnk-comp — 330 — A FB = 3.5 V COMP = 2.5 V Error amplifier Transconductance gm 120 200 290 s FB = 2.45V 2.55 V COMP = 2.5 V RAMP charge current at DUVP disable condition Ic-ramp1 –60 –50 –40 A FB = 2.4 V RAMP charge current at DUVP enable condition Ic-ramp2 –32 –25 –18 A FB = 2 V RAMP discharge current Id-ramp 7 15 29 mA RAMP = 1 V Ramp Low voltage Vl-ramp — 17 200 mV Isink = 100 A Phase delay Phase 160 180 200 deg Slave control On time ratio Ton-ratio 0 — 5 % FB = 2.5 V, COMP = 2 V * 1, 2 Notes: *1 Design spec *2 Ton-ratio = Ton-s Ton-m × 100 [%] 1 – Phase = Tdelay Tperiod × 360 [deg] GD-M GD-S Tperiod (100 μs) Tdelay Ton-m (50 μs) Ton-s |
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