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RJK0215DPA Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RJK0215DPA
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0215DPA Datasheet(HTML) 2 Page - Renesas Technology Corp

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RJK0215DPA
Preliminary
R07DS0207EJ0110 Rev.1.10
Page 2 of 10
Sep 05, 2011
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
25
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
±0.1
A
VGS = ±20 V, VDS = 0
Zero gate voltage drain current
IDSS
1
A
VDS = 25 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.2
2.5
V
VDS = 10 V, I D = 1 mA
RDS(on)
7.6
9.2
m
ID = 7.5 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
10.5
13.7
m
ID = 7.5 A, VGS = 4.5 V
Note4
Forward transfer admittance
|yfs|
30
S
ID = 7.5 A, VDS = 5 V
Note4
Input capacitance
Ciss
810
1130
pF
Output capacitance
Coss
130
pF
Reverse transfer capacitance
Crss
74
pF
VDS = 10 V
VGS = 0
f = 1MHz
Gate Resistance
Rg
1.2
2.4
Total gate charge
Qg
6.2
nC
Gate to source charge
Qgs
2.8
nC
Gate to drain charge
Qgd
1.9
nC
VDD = 10 V
VGS = 4.5 V
ID = 15 A
Turn-on delay time
td(on)
7.3
ns
Rise time
tr
5.3
ns
Turn-off delay time
td(off)
33.9
ns
Fall time
tf
5.4
ns
VGS =10 V, ID = 7.5 A
VDD  10 V
RL = 1.33 
Rg = 4.7 
Body–drain diode forward voltage
VDF
0.84
1.10
V
IF = 15 A, VGS = 0
Note4
Body–drain diode reverse
recovery time
trr
20
ns
IF =15 A, VGS = 0
diF/ dt = 100 A/s
Notes: 4. Pulse test


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