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CNY17 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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CNY17 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page 5–1 FEATURES • High Current Transfer Ratio CNY17-1, 40 to 80% CNY17-2, 63 to 125% CNY17-3, 100 to 200% CNY17-4, 160 to 320% • Breakdown Voltage, 5300 VACRMS • Field-Effect Stable by TRIOS* • Long Term Stability • Industry Standard Dual-in-Line Package • Underwriters Lab File #E52744 • VDE #0884, Available with Option 1 DESCRIPTION The CNY17 is an optically coupled pair consisting of a Gallium Arsenide infrared emitting diode opti- cally coupled to a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and out- put. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modu- lation. Maximum Ratings (TA=25°C) Emitter Reverse Voltage .................................................6 V Forward Current............................................ 60 mA Surge Current (t ≤10µs)................................... 2.5 A Power Dissipation .......................................100 mW Detector Collector-Emitter Breakdown Voltage ...............70 V Emitter-Base Breakdown Voltage .......................7 V Collector Current .......................................... 50 mA Collector Current (t <1 ms)......................... 100 mA Power Dissipation .......................................150 mW Package Isolation Test Voltage (Between emitter & detector referred to climate DIN 40046, part 2, Nov. 74) ..............................5300 VACRMS Creepage Distance .......................................... ≥7 mm Clearance Distance ......................................... ≥7 mm Isolation Thickness between Emitter and Detector ................................. ≥0.4 mm Comparative Tracking Index per DIN IEC 112/ VDE0303, part 1.............................................175 Isolation Resistance VIO=500 V, TA=25°C................................... ≥10 12 Ω VIO=500 V, TA=100°C ................................ ≥10 11 Ω Storage Temperature ................... –55 °C to +150°C Operating Temperature ............... –55 °C to +100°C Junction Temperature ....................................100 °C Soldering Temperature (max . 10 s, dip soldering: distance to seating plane ≥1.5 mm) ..........260°C V DE Characteristics (TA=25°C) Symbol Unit Condition Emitter Forward Voltage VF 1.25 ( ≤1.65) VIF = 60 mA Breakdown Voltage VBR ≥6V IR = 10 mA Reverse Current IR 0.01 ( ≤10) µAV R = 6 V Capacitance 25 pF VR = 0 V, f =1 MHz Thermal Resistance Rthjamb 750 K/W Detector Capacitance CCE CCB CEB 5.2 6.5 7.5 pF pF pF VCE =5 V, f =1 MHz VCB =5 V, f =1 MHz VEB =5 V, f =1 MHz Thermal Resistance Rthjamb 500 K/W Package Collector-Emitter Saturation Voltage VCEsat 0.25 ( ≤0.4) V IF =10 mA, IC=2.5 mA Coupling Capacitance CC 0.6 pF Dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) Pin One ID 6 5 4 1 2 3 18 ° typ. .300 (7.62) .347 (8.82) 4 ° typ. 1 2 3 6 5 4 Base Collector Emitter Anode Cathode NC CNY17 SERIES TRIOS“ PHOTOTRANSISTOR OPTOCOUPLER This document was created with FrameMaker 4.0.4 |
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