Semiconductor Group

5

HYB 3117800BSJ-50/-60/-70

2M x 8-DRAM

Absolute Maximum Ratings

Operating temperature range ............................................................................................0 to 70 °C

Storage temperature range.........................................................................................– 55 to 150 °C

Input/output voltage ...............................................................................-0.5 to min (Vcc+0.5, 4.6) V

Power supply voltage...................................................................................................-1.0V to 4.6 V

Power dissipation..................................................................................................................... 0.5 W

Data out current (short circuit) ................................................................................................ 50 mA

Note:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of

the device. Exposure to absolute maximum rating conditions for extended periods may affect device

reliability.

DC Characteristics

± 0.3V, t

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

Input high voltage

V

IH

2.0

Vcc+0.5

V

1)

Input low voltage

– 0.5

0.8

V

1)

LVTTL Output high voltage (

I

V

OH

2.4

–

V

1)

LVTTL Output low voltage (

–0.4

V

1)

CMOS Output high voltage (

I

V

OH

Vcc-0.2

–

V

CMOS Output low voltage (

µA)

–0.2

V

)

Input leakage current,any input

(0 V

IH

≤ Vcc + 0.3V, all other pins = 0 V)

I

I(L)

– 10

10

µA

1)

Output leakage current

(DO is disabled, 0 V

I

O(L)

– 10

10

µA

1)

Average

-50 ns version

-60 ns version

-70 ns version

–

–

–

120

110

100

mA

mA

mA

2) 3) 4)

2) 3) 4)

2) 3) 4)

Standby

–2mA

–

Average

V

refresh cycles:

-50 ns version

-60 ns version

-70 ns version

(RAS cycling: CAS =

V

I

CC3

–

–

–

120

110

100

mA

mA

mA

2) 4)

2) 4)

2) 4)