Semiconductor Group

2

HYB 3117800BSJ-50/-60/-70

2M x 8-DRAM

The HYB 3117800BSJ is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB

3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced

circuit techniques to provide wide operating margins, both internally and for the system user.

Multiplexed address inputs permit the HYB 3117800BSJ to be packaged in a standard SOJ 28

400 mil plastic package. These packages provide high system bit densities and are compatible with

commonly used automatic testing and insertion equipment. System-oriented features include single

+ 3.3 V (

± 0.3V) power supply, direct interfacing with high-performance logic device families.

Ordering Information

Pin Names

Type

Ordering Code

Package

Descriptions

HYB 3117800BSJ-50

Q67100-Q1147

P-SOJ-28-3

400 mil

3.3V DRAM (access time 50 ns)

HYB 3117800BSJ-60

Q67100-Q1148

P-SOJ-28-3

400 mil

3.3V DRAM (access time 60 ns)

HYB 3117800BSJ-70

P-SOJ-28-3

400 mil

3.3V DRAM (access time 70 ns)

A0 to A10

Row Address Inputs

A0 to A9

Column Address Inputs

RAS

Row Address Strobe

OE

Output Enable

I/O1-I/O8

Data Input/Output

CAS

Column Address Strobe

WE

Read/Write Input

Power Supply (+ 3.3 V)

V

SS

Ground (0 V)

N.C.

not connected