NX7535 datasheet(5/11 Pages) RENESAS

Part #	NX7535

Description	LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 11 page

NX7535 Series

Chapter Title

R08DS0024EJ0200 Rev.2.00

Page 5 of 9

Sep 19, 2010

ORDERING INFORMATION

Part Number

FIange Type

NX7535AN-AA

without flange

NX7535BN-AA

flat mount flange

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Ratings

Unit

Pulsed Forward Current

*1

IFP

300

mA

Reverse Voltage

VR

2.0

V

Reverse Voltage (monitor PD)

VRM

10

V

Forward Current (monitor PD)

IFPM

2.0

mA

Operating Case Temperature

TC

0 to +60

°C

Storage Temperature

Tstg

−40 to +85

°C

Lead Soldering Temperature

Tsld

350 (3 sec.)

°C

Relative Humidity (noncondensing)

RH

85

%

*1

Pulse Condition: Pulse Width (PW) = 10

μs, Duty = 1%

ELECTRO-OPTICAL CHARACTERISTICS (TC = 25

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Forward Voltage

VFP

IFP = 200 mA,

PW = 10

μs, Duty = 1%

3.5

V

Threshold Current

Ith

5

25

mA

Optical Output Power from Fiber

Pf

IFP = 200 mA,

PW = 10

μs, Duty = 1%

15

30

mW

Center Wavelength

λC

RMS (

−20 dB), IFP = 200 mA,

PW = 10

μs, Duty = 1%

1 530

1 550

1 570

nm

Spectral Width

σ

RMS (

−20 dB), IFP = 200 mA,

PW = 10

μs, Duty = 1%

10.0

nm

Rise Time

tr

10-90%

2.0

ns

Fall Time

tf

90-10%

2.0

ns

Forward Current (CW)

Ifcw

Pfcw = 2 mW

15

mA

Monitor Current

Im

Pfcw = 2 mW, VRM = 2 V

0.05

2

mA

<R>

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