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RJK0222DNS Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK0222DNS Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 5 page R07DS0125EJ0030 Rev.0.30 Page 1 of 4 Sep 06, 2010 Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A (Package name: HWSON3046-8 Dual) 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source 8 7 6 5 2 1 3 4 G1 D1 G2 S2 MOS1 MOS2 and Schottky Barrier Diode 1 2 8 5 S2 6 S2 7 S1/D2 9 D1 3 D1 4 9 5678 432 (Bottom View) 1 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol MOS1 MOS2 Unit Drain to source voltage VDSS 25 25 V Gate to source voltage VGSS ±20 ±12 V Drain current ID 14 16 A Drain peak current ID(pulse) Note1 56 64 A Reverse drain current IDR 14 16 A Avalanche current IAP Note 2 5 8 A Avalanche energy EAR Note 2 3.1 8.0 mJ Channel dissipation Pch Note3 8 10 W Channel temperature Tch 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25 C, Rg 50 3. Tc = 25 C R07DS0125EJ0030 (Previous: REJ03G1951-0020) Rev.0.30 Sep 06, 2010 |
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