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RJH60D5DPK Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJH60D5DPK Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 8 page  R07DS0163EJ0300 Rev.3.00 Page 1 of 7 Nov 16, 2010 Preliminary Datasheet RJH60D5DPK Silicon N Channel IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load) Outline 1. Gate 2. Collector 3. Emitter C G E RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES ±30 V Tc = 25°C IC 75 A Collector current Tc = 100°C IC 37 A Collector peak current ic(peak) Note1 150 A Collector to emitter diode forward current IDF 30 A Collector to emitter diode forward peak current iDF(peak) Note1 120 A Collector dissipation PC Note2 200 W Junction to case thermal resistance (IGBT) j-c Note2 0.63 °C/ W Junction to case thermal resistance (Diode) j-cd Note2 2.1 °C/ W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C R07DS0163EJ0300 Rev.3.00 Nov 16, 2010 |
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