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Q67100-Q1144 Datasheet(PDF) 9 Page - Siemens Semiconductor Group

Part # Q67100-Q1144
Description  3.3V 4M x 4-Bit EDO-Dynamic RAM
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

Q67100-Q1144 Datasheet(HTML) 9 Page - Siemens Semiconductor Group

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Semiconductor Group
9
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Output buffer turn-off delay
tOFF
013
0
15
017
ns
12
Output turn-off delay from OE
tOEZ
013
0
15
017
ns
12
Data to CAS low delay
tDZC
0–0
–0–
ns
13
Data to OE low delay
tDZO
0–0
–0–
ns
13
CAS high to data delay
tCDD
10
13
15
ns
14
OE high to data delay
tODD
10
13
15
ns
14
Write Cycle
Write command hold time
tWCH
8–10
10
ns
Write command pulse width
tWP
8–10
10
ns
Write command setup time
tWCS
0–0
–0–
ns
15
Write command to RAS lead time tRWL
13
15
17
ns
Write command to CAS lead time tCWL
13
15
17
ns
Data setup time
tDS
0–0
–0–
ns
16
Data hold time
tDH
8–10
12
ns
16
Read-modify-Write Cycle
Read-write cycle time
tRWC
113
138
162
ns
RAS to WE delay time
tRWD
64
77
89
ns
15
CAS to WE delay time
tCWD
27
32
36
ns
15
Column address to WE delay time tAWD
39
47
54
ns
15
OE command hold time
tOEH
10
13
15
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle
time
tHPC
20
25
30
ns
CAS precharge time
tCP
8–10
10
ns
Access time from CAS precharge
tCPA
–27
32
–37
ns
7
Output data hold time
tCOH
5–5
–5–
ns
RAS pulse width in EDO mode
tRAS
50
200k
60
200k
70
200k
ns
AC Characteristics (cont’d) 5)6)
16E
TA = 0 to 70 °C,VCC = 5 V
± 10 %, t
T = 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.


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