CCD area image sensor

S7986-01, S7987-01

s Absolute maximum ratings (Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Topr

-50

-

+30

°C

Storage temperature

Tstg

-50

-

+70

°C

OD voltage

-0.5

-

+25

V

RD voltage

-0.5

-

+18

V

ISV voltage

-0.5

-

+18

V

ISH voltage

-0.5

-

+18

V

IGV voltage

-10

-

+15

V

IGH voltage

-10

-

+15

V

SG voltage

-10

-

+15

V

OG voltage

-10

-

+15

V

RG voltage

-10

-

+15

V

TG voltage

-10

-

+15

V

Vertical clock voltage (image area)

-10

-

+15

V

Vertical clock voltage (storage area)

-10

-

+15

V

Horizontal clock voltage

-10

-

+15

V

*2: Chip temperature

s Operating conditions (MPP mode, Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Output transistor drain voltage

12

15

18

V

Reset drain voltage

11.5

12

12.5

V

Output gate voltage

1

3

5

V

Substrate voltage

-

0

-

V

Vertical input source

-

-

V

Horizontal input source

-

-

V

Vertical input gate

-9

-8

-

V

Test point

Horizontal input gate

-9

-8

-

V

High

4

6

8

Vertical shift register

clock voltage (Image area)

Low

-9

-8

-7

V

High

4

6

8

Vertical shift register

clock voltage (Storage area)

Low

-9

-8

-7

V

High

4

6

8

Horizontal shift register

clock voltage

Low

-9

-8

-7

V

High

4

6

8

Summing gate voltage

Low

-9

-8

-7

V

High

4

6

8

Reset gate voltage

Low

-9

-8

-7

V

High

4

6

8

Transfer gate voltage

Low

-9

-8

-7

V

External load resistance

2.0

2.2

2.4

k

Ω

s Electrical characteristics (Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Signal output frequency

fc

-

1

14

MHz

Vertical shift register capacitance

(Image area)

-

3000

-

pF

Vertical shift register capacitance

(Storage area)

-

3000

-

pF

Horizontal shift register capacitance

-

90

-

pF

Summing gate capacitance

-

30

-

pF

Reset gate capacitance

-

30

-

pF

Charge transfer gate capacitance

-

70

-

pF

CTE

0.99995

0.99999

-

-

DC output level

Vout

-

8

-

V

Output impedance

Zo

-

500

-

Ω

P

-

60

-

mW

*3: Charge transfer efficiency per pixel, measured at half of the full well capacity.

*4: Power consumption of the on-chip amplifier plus load resistance

2