Photo IC diode

S9066-111, S9067-101

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.

Cat. No. KPIC1052E05

Feb. 2008 DN

ILLUMINANCE (lx)

0.1

1

10

10 nA

100 nA

1 µA

10 mA

1 mA

100 µA

10 µA

100

1000

AMBIENT TEMPERATURE (˚C)

1 nA

100 nA

10 µA

10 nA

1 µA

100 pA

050

25

75

100

1000

100

10

1

0.1

100

1 k

10 k

LOAD RESISTANCE (

Ω)

100 k

1 M

λ=560 nm, Vo=2.5 V)

tr

tf

2

CATHODE

ANODE

Tolerance unless otherwise

Active area position accuracy: X, Y

Electrodes

0.4

3.2 ± 0.2

0.4

0.13

2.2

(4 ×) 0.5

CENTER OF ACTIVE AREA

ACTIVE AREA 0.32 × 0.46

2.0 ± 0.1

PHOTOSENSITIVE

SURFACE

KPICB0078EC

s Dimensional outlines (unit: mm)

s Spectral response

0.1

0.2

0.3

0.4

0.5

0.7

0.9

0.6

0.8

1.0

0

200

400

600

800

WAVELENGTH (nm)

1000

1200

S9066-111

S9067-101

HUMAN EYE

SENSITIVITY

KPICB0076EB

s Dark current vs. ambient temperature

KPICB0115EA

s Rise/fall times vs. load resistance

S9066-111

S9067-101

PHOTOSENSITIVE

SURFACE

10˚

5˚

10˚

5˚

0.25

+0.15

-0.1

1.0

2.0

2.0 (DEPTH 0.15)

ANODE

(ANODE)

NC

CATHODE

Tolerance unless otherwise

Shaded area indicates burr.

Values in parentheses indicate

reference value.

5.2 ± 0.3

(INCLUDIG BURR)

CENTER OF ACTIVE AREA

ACTIVE AREA 0.46 × 0.32

(SPECIFIED AT THE LEAD ROOT)

(2 ×)

1.0

(DEPTH 0.15)

2.5 ± 0.2

5.0

1.27 1.27 1.27

(4 ×) 0.55

(4 ×) 0.45

KPICA0050EE

KPICA0051EC

s Operating circuit example

KPICC0091EB

PHOTODIODE

FOR SIGNAL OFFSET

CATHODE

ANODE

Vout

REVERSE BIAS

POWER SUPPLY

THE DRAWING SURROUNDED

BY THE DOTTED LINE SHOWS

A SCHEMATIC DIAGRAM OF

THE PHOTO IC.

CURRENT AMP

(APPROX. 30000 times)

PHOTODIODE

FOR SIGNAL DETECTION

INTERNAL PROTECTION

RESISTANCE

(APPROX. 150

9)

The photo IC diode must be reverse-

biased so that a positive potential

is applied to the cathode.

To eliminate high-frequency

components, we recommend

a low-pass filter.

Cut-off frequency fc =

2

1

.

.

s Linearity (S9066-111)

KPICB0083EB