CCD area image sensor

S10140/S10141 series

2

General ratings

Absolute maximum ratings (Ta=25 °C)

Operating conditions (MPP mode, Ta=25 °C)

Parameter

S10140 series

S10141 series

Pixel size

12 (H) × 12 (V) m

Vertical clock phase

2 phases

Horizontal clock phase

2 phases

Output circuit

One-stage MOSFET source follower

Package

24-pin ceramic DIP (refer to dimensional outlines)

Quartz glass

AR-coated sapphire

*

1: Temporary window type (ex. S10140-1107N) is available upon request.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Topr

-50

-

+50

°C

Storage temperature

Tstg

-50

-

+70

°C

Output transistor drain voltage

-0.5

-

+30

V

Reset drain voltage

-0.5

-

+18

V

Vertical input source voltage

-0.5

-

+18

V

Horizontal input source voltage

-0.5

-

+18

V

Vertical input gate voltage

-10

-

+15

V

Horizontal input gate voltage

-10

-

+15

V

Summing gate voltage

-10

-

+15

V

Output gate voltage

-10

-

+15

V

Reset gate voltage

-10

-

+15

V

Transfer gate voltage

-10

-

+15

V

Vertical shift register clock voltage

-10

-

+15

V

Horizontal shift register clock voltage

-10

-

+15

V

*

2: Package temperature (S10140 series), chip temperature (S10141 series)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Output transistor drain voltage

23

24

25

V

Reset drain voltage

11

12

13

V

Output gate voltage

2.5

3

3.5

V

Substrate voltage

-0-

V

Test point

vertical input source

-V

horizontal input source

-V

vertical input gate

-9

-8

-

V

horizontal input gate

-9

-8

-

V

Vertical shift register

clock voltage

High

2.5

3

3.5

V

Low

-9

-8

-7

Horizontal shift register

clock voltage

High

456

V

Low

-9

-8

-7

Summing gate voltage

High

456

V

Low

-9

-8

-7

Reset gate voltage

High

456

V

Low

-9

-8

-7

Transfer gate voltage

High

2.5

3

3.5

V

Low

-9

-8

-7

External load resistance

90

100

110

k