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AM60N10-70P Datasheet(PDF) 1 Page - Analog Power |
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AM60N10-70P Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM60N10-70P N-Channel 100-V (D-S) MOSFET VDS (V) ID(A) Symbol Limit Units VDS 100 VGS ±20 Continuous Drain Current a TA=25°C ID 51 IDM 240 IS 90 A Power Dissipation a TA=25°C PD 300 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 62.5 RθJC 1 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Maximum Junction-to-Ambient a Maximum Junction-to-Case 51 a Gate-Source Voltage PRODUCT SUMMARY 100 rDS(on) (mΩ) 78 @ VGS = 10V 92 @ VGS = 5.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits DRAIN connected to TAB © Preliminary 1 Publication Order Number: DS_AM60N10-70P_1A |
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