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Q67100-Q1088 Datasheet(PDF) 7 Page - Siemens Semiconductor Group

Part # Q67100-Q1088
Description  4M x 4-Bit Dynamic RAM
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

Q67100-Q1088 Datasheet(HTML) 7 Page - Siemens Semiconductor Group

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Semiconductor Group
7
HYB 5117400BJ/BT-50/-60/-70
4M x 4-DRAM
AC Characteristics 5)6)
16F
T
A = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
common parameters
Random read or write cycle time
tRC
90
110
130
ns
RAS precharge time
tRP
30
40
50
ns
RAS pulse width
tRAS
50
10k
60
10k
70
10k
ns
CAS pulse width
tCAS
13
10k
15
10k
20
10k
ns
Row address setup time
tASR
0–0
–0–
ns
Row address hold time
tRAH
8–10
10
ns
Column address setup time
tASC
0–0
–0–
ns
Column address hold time
tCAH
10
15
15
ns
RAS to CAS delay time
tRCD
18
37
20
45
20
50
RAS to column address delay
time
tRAD
13
25
15
30
15
35
ns
RAS hold time
tRSH
13
15
20
ns
CAS hold time
tCSH
50
60
70
ns
CAS to RAS precharge time
tCRP
5–5
–5–
ns
Transition time (rise and fall)
tT
350
3
50
350
ns
7
Refresh period
tREF
–32
32
–32
ms
Read Cycle
Access time from RAS
tRAC
–50
60
–70
ns
8, 9
Access time from CAS
tCAC
–13
15
–20
ns
8, 9
Access time from column address tAA
–25
30
–35
ns
8,10
OE access time
tOEA
–13
15
–20
ns
Column address to RAS lead time tRAL
25
30
35
ns
Read command setup time
tRCS
0–0
–0–
ns
Read command hold time
tRCH
0–0
–0–
ns
11
Read command hold time
referenced to RAS
tRRH
0–0
–0–
ns
11
CAS to output in low-Z
tCLZ
0–0
–0–
ns
8
Output buffer turn-off delay
tOFF
013
0
15
020
ns
12


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