HYB 5118160BSJ-50/-60

HYB 3118160BSJ-50/-60

1M

× 16 DRAM

Semiconductor Group

2

1998-10-01

The HYB 5(3)118160 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized

as 1 048 576 words by 16-bits. The HYB 5(3)118)160 utilizes a submicron CMOS silicon gate

process technology, as well as advanced circuit techniques to provide wide operating margins, both

internally and for the system user. Multiplexed address inputs permit the HYB 5(3)118160 to be

packaged in a standard SOJ-42 plastic package with 400 mil width. This package provide high

system bit densities and is compatible with commonly used automatic testing and insertion

equipment.

Ordering Information

Type

Ordering Code

Package

Descriptions

HYB 5118160BSJ-50

Q67100-Q1072

P-SOJ-42-1 400 mil

5 V

50 ns FPM-DRAM

HYB 5118160BSJ-60

Q67100-Q1073

P-SOJ-42-1 400 mil

5 V

60 ns FPM-DRAM

HYB 3118160BSJ-50

on request

P-SOJ-42-1 400 mil

3.3 V 50 ns FPM-DRAM

HYB 3118160BSJ-60

on request

P-SOJ-42-1 400 mil

3.3 V 60 ns FPM-DRAM

Pin Names

HYB 5(3)118160

Row Address Inputs

A0 - A9

Column Address Inputs

A0 - A9

Row Address Strobe

RAS

Upper Column Address Strobe

UCAS

Lower Column Address Strobe

LCAS

Output Enable

OE

Data Input/Output

I/O1 - I/O16

Read/Write Input

WE

Power Supply

V

CC

Ground (0 V)

V

SS

Not Connected

N.C.