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Q67100-Q1108 Datasheet(PDF) 9 Page - Siemens Semiconductor Group |
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Q67100-Q1108 Datasheet(HTML) 9 Page - Siemens Semiconductor Group |
9 / 24 page HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M × 16 EDO-DRAM Semiconductor Group 9 1998-10-01 Access time from CAS precharge t CPA – 27 – 32 ns 7 Output data hold time t COH 5–5–ns RAS pulse width in EDO mode t RAS 50 200k 60 200k ns CAS precharge to RAS delay t RHCP 27 – 32 – ns OE setup time prior to CAS t OES 5–5–5 – Hyper Page Mode (EDO) Read-Modify-Write Cycle Hyper page mode (EDO) read-write cycle time t PRWC 58 – 68 – ns CAS precharge to WE t CPWD 41 – 49 – ns CAS-before-RAS Refresh Cycle CAS setup time t CSR 10 – 10 – ns CAS hold time t CHR 10 – 10 – ns RAS to CAS precharge time t RPC 5–5–ns Write to RAS precharge time t WRP 10 – 10 – ns Write hold time referenced to RAS t WRH 10 – 10 – ns CAS-before-RAS Counter Test Cycle CAS precharge time (CAS-before-RAS counter test cycle) t CPT 35 – 40 – ns AC Characteristics (cont’d) 5, 6 T A = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns Parameter Symbol Limit Values Unit Note -50 -60 min. max. min. max. |
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