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Q67100-3039 Datasheet(PDF) 9 Page - Siemens Semiconductor Group

Part # Q67100-3039
Description  256K x 16-Bit EDO-Dynamic RAM
Download  28 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

Q67100-3039 Datasheet(HTML) 9 Page - Siemens Semiconductor Group

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HYB 5(3)14265BJ(L)-400/-40/-45/-50
256K x 16 EDO-DRAM
Semiconductor Group
9
Output buffer turn-off delay from OE
t
OEZ
0
10
0
10
ns
12
Data to OE low delay
t
DZO
0–0
ns
13
CAS high to data delay
t
CDD
8–8–ns
14
OE high to data delay
t
ODD
8–8–ns
14
Data to CAS low delay
t
DZC
0–0–ns
13
Write Cycle
Write command hold time
t
WCH
5–5–ns
Write command pulse width
t
WP
5–5–ns
Write command setup time
t
WCS
0–0–ns
15
Write command to RAS lead time
t
RWL
10
10
ns
Write command to CAS lead time
t
CWL
10
10
ns
Data setup time
t
DS
0–0–ns
16
Data hold time
t
DH
5–5–ns
16
Data to CAS low delay
t
DZC
0–0–ns
13
Read-modify-Write Cycle
Read-write cycle time
t
RWC
93
93
ns
RAS to WE delay time
t
RWD
52
52
ns
15
CAS to WE delay time
t
CWD
22
22
ns
15
Column address to WE delay time
t
AWD
32
32
ns
15
OE command hold time
t
OEH
5–5–ns
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
t
HPC
12.5
15
ns
Access time from CAS precharge
t
CPA
17
21
ns
7
Output data hold time
t
COH
3–3–ns
RAS pulse width in hyper page mode
t
RAS
40
200k
40
200k
ns
RAS hold time from CAS precharge
t
RHCP
17
21
ns
Parameter
Symbol
Limit Values
Unit Note
-400
-40
min.
max.
min.
max.


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