2N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-547.b

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

500

V

Drain-Source Leakage Current

25

µA

Forward

+100 nA

Gate- Source Leakage Current

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

3.9

4.9

Ω

DYNAMIC PARAMETERS

Input Capacitance

236

pF

Output Capacitance

40

pF

Reverse Transfer Capacitance

22

pF

SWITCHING PARAMETERS

Total Gate Charge

20

25

nC

Gate to Source Charge

2

3

nC

Gate to Drain Charge

(Note 1, 2)

12

15

nC

Turn-ON Delay Time

10

ns

Rise Time

20

ns

Turn-OFF Delay Time

60

ns

Fall-Time

(Note 1, 2)

20

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

2

A

Maximum Body-Diode Pulsed Current

8

A

Drain-Source Diode Forward Voltage

1.2

V

Body Diode Reverse Recovery Time

300

ns

Body Diode Reverse Recovery Charge

(Note 1)

2.1

µC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature