2SD1802

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R209-001.Ba

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

6

V

Collector Power Dissipation

1

W

15

Collector Current (DC)

3

A

Collector Current (PULSE)

6

A

Junction Temperature

150

℃

Storage Temperature

-55 ~ +150

℃

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range

and assured by design from –20℃~85℃.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cutoff Current

1

μA

Emitter Cutoff Current

1

μA

DC Current Gain (note)

100

560

35

Gain-Bandwidth Product

150

MHz

Output Capacitance

25

pF

C-E Saturation Voltage

0.19

0.5

V

B-E Saturation Voltage

0.94

1.2

V

C-B Breakdown Voltage

60

V

C-E Breakdown Voltage

50

V

E-B Breakdown Voltage

6

V

Turn-on Time

See test circuit

70

ns

Storage Time

See test circuit

650

ns

Fall Time

See test circuit

35

ns

RANK

R

S

T

U

RANGE

100-200

140-280

200-400

280-560