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2SD1624L-X-AB3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SD1624L-X-AB3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 2SD1624 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R208-005.D ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Power Dissipation( Tc=25 °C) PC 500 mW DC IC 3 A Collector Current PULSE ICP 6 A Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 60 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, RBE=∞ 50 V Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V Collector-Emitter Saturation Voltage VCE(SAT) IC=2A, IB=100mA 0.19 0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=2A, IB=100mA 0.94 1.2 V Collector Cut-Off Current ICBO VCB=40V, IE=0 1 μA Emitter Cut-Off Current IEBO VEB=4V, IC=0 1 μA DC Current Gain hFE VCE=2V, Ic=100mA 100 560 Gain-Bandwidth Product fT VCE=10V, IC=50mA 150 MHz Output Capacitance COB VCE=10V, f=1MHz 25 pF Turn-ON Time tON See test circuit 70 ns Storage Time tSTG See test circuit 650 ns Fall Time tF See test circuit 35 ns CLASSIFICATION OF hFE RANK R S T U RANGE 100-200 140-280 200-400 280-560 |
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