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6N70L-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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6N70L-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 6N70 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-710.a ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage (Note 2) VGSS ±30 V Drain Current Continuous TC=25°C ID 6 A TC=100°C 3.8 A Pulsed IDM 24 A Avalanche Current (Note 2) IAR 6 A Avalanche Energy Single Pulsed (Note 3) EAS 582 mJ Repetitive (Note 2) EAR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.5 V/ns Power Dissipation PD 130 W Linear Derarting Factor 1.04 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 0.96 °C/W |
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