MCM6343

3

MOTOROLA FAST SRAM

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V ± 0.3 V, TA = 0 to 70°C, Unless Otherwise Noted)

(TA = – 40 to + 85°C for Industrial Temperature Offering)

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Power Supply Voltage

VDD

3.0

3.3

3.6

V

Input High Voltage

VIH

2.2

—

V

Input Low Voltage

VIL

– 0.5

*

—

0.8

V

*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.

** VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.

DC CHARACTERISTICS

Parameter

Symbol

Min

Max

Unit

Input Leakage Current (All Inputs, Vin = 0 to VDD)

Ilkg(I)

—

± 1.0

µA

Output Leakage Current (E = VIH, Vout = 0 to VDD)

Ilkg(O)

—

± 1.0

µA

Output Low Voltage

(IOL = + 4.0 mA)

(IOL = + 100 µA)

VOL

—

0.4

VSS + 0.2

V

Output High Voltage

(IOH = – 4.0 mA)

(IOH = – 100 µA)

VOH

2.4

VDD – 0.2

—

V

POWER SUPPLY CURRENTS

Parameter

Symbol

0 to 70

°C

– 40 to

+ 85

°C

Unit

AC Active Supply Current

MCM6343–12: tAVAV = 12 ns

(Iout = 0 mA, VCC = max)

MCM6343–15: tAVAV = 15 ns

ICC

240

230

240

mA

AC Standby Current (VCC = max, E = VIH,

MCM6343–12: tAVAV = 12 ns

No other restrictions on other inputs)

MCM6343–15: tAVAV = 15 ns

ISB1

50

45

55

50

mA

CMOS Standby Current (E

≥ VCC – 0.2 V, Vin ≤ VSS + 0.2 V or ≥ VCC – 0.2 V)

(VCC = max, f = 0 MHz)

ISB2

5

5

mA

Parameter

Symbol

Typ

Max

Unit

Address Input Capacitance

Cin

—

6

pF

Control Input Capacitance

Cin

—

6

pF

Input/Output Capacitance

CI/O

—

8

pF