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AP2112M-1.2TRG1 Datasheet(PDF) 6 Page - BCD Semiconductor Manufacturing Limited |
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AP2112M-1.2TRG1 Datasheet(HTML) 6 Page - BCD Semiconductor Manufacturing Limited |
6 / 19 page Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Aug. 2010 Rev 1. 0 BCD Semiconductor Manufacturing Limited 6 Electrical Characteristics AP2112-1.2 Electrical Characteristic (Note 2) VIN=2.5V, CIN=1.0µF (Ceramic), COUT=1.0µF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Test Conditions Min Typ Max Unit Output Voltage VOUT VIN =2.5V, 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 1.2 VOUT *101.5% V Maximum Output Current IOUT(MAX) VIN =2.5V, VOUT=1.182V to 1.218V 600 mA Load Regulation (V △ OUT/VOUT)/ △ IOUT VIN=2.5V, 1mA ≤ IOUT ≤600mA 0.2 ± 0.1 %/A Line Regulation (V △ OUT/VOUT)/ △ VIN 2.5V≤VIN≤6V, IOUT=30mA 0.02 %/V IOUT =10mA 1000 1300 IOUT =300mA 1000 1300 Dropout Voltage VDROP IOUT=600mA 1000 1300 mV Quiescent Current IQ VIN=2.5V, IOUT=0mA 55 80 µ A Standby Current ISTD VIN=2.5V, VEN in OFF mode 0.01 1.0 µ A f=100Hz 65 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=2.5V, IOUT=100mA f=1KHz 65 dB Output Voltage Temperature Coefficient ( VOUT/VOUT)/ △ T △ IOUT=30mA TA =-40°C to 85°C ±100 ppm Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µ VRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 V Start-up Time TS No Load 20 µs EN Pull Down Resistor RPD 3.0 M Ω VOUT discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 °C SOT-23-5 96 SOIC-8 75 Thermal Resistance θJC SOT-89-5 47 °C /W |
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