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AP2125N-1.8TRE1 Datasheet(PDF) 5 Page - BCD Semiconductor Manufacturing Limited |
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AP2125N-1.8TRE1 Datasheet(HTML) 5 Page - BCD Semiconductor Manufacturing Limited |
5 / 27 page 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Data Sheet 5 May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Parameter Symbol Value Unit Input Voltage VIN 6.5 V Enable Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 450 mA Junction Temperature TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 10sec) TLEAD 260 oC Thermal Resistance θJA SOT-23-3 200 oC/W SOT-23-5 200 SC-70-5 300 SC-82 300 ESD (Human Body Model) ESD 6000 V ESD (Machine Model) ESD 400 V Absolute Maximum Ratings (Note 1) Parameter Symbol Min Max Unit Input Voltage VIN VOUT+0.5V 6 V Operating Ambient Temperature Range TA -40 85 oC Recommended Operating Conditions Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. |
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