MMBTA56

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R206-090,B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-80

V

Collector-Emitter Voltage

-80

V

Emitter-Base Voltage

-4

V

Collector Current - Continuous

-500

mA

Total Device Dissipation(Note 1)

Derate Above 25℃

350

2.8

mW

mW/℃

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note 1. Device mounted on FR-4=1.6×1.6×0.06 in

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MAX

UNIT

Thermal Resistance, Junction to Ambient

357

℃

/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(Note 1)

-80

V

Emitter-Base Breakdown Voltage

-4

V

Collector Cutoff Current

-0.1

μA

Collector Cutoff Current

-0.1

μA

ON CHARACTERISTICS

DC Current Gain

100

100

Collector-Emitter Saturation Voltage

-0.25

V

Base-Emitter on Voltage

-1.2

V

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

(Note2)

f=100MHz

100

MHz

Note 1: Pulse test: PW≤300

μs, Duty Cycle≤2%