BS62UV256_08 datasheet(3/10 Pages) BSI

Part #	BS62UV256

Description	Ultra Low Power CMOS SRAM 32K X 8 bit

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	BSI [Brilliance Semiconductor]

Direct Link

Logo

3 / 10 page

BS62UV256

R0201-BS62UV256

Revision

2.7

Oct.

2008

3

DC ELECTRICAL CHARACTERISTICS (TA = -40

OC to +85OC)

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN.

TYP.(1)

MAX.

UNITS

VCC

Power Supply

1.8

--

3.6

V

VCC=2.0V

0.6

VIL

Input Low Voltage

VCC=3.0V

-0.5

(2)

--

0.8

V

VCC=2.0V

1.4

VIH

Input High Voltage

VCC=3.0V

2.2

--

VCC+0.3

(3)

V

IIL

Input Leakage Current

VIN = 0V to VCC

--

1

uA

ILO

Output Leakage Current

CE= VIH, or OE = VIH,

VI/O = 0V to VCC

--

1

uA

VCC = Max, IOL = 0.1mA

VCC=2.0V

0.2

VOL

Output Low Voltage

VCC = Max, IOL = 2.0mA

VCC=3.0V

--

0.4

V

VCC = Min, IOH = -0.1mA

VCC=2.0V

1.6

VOH

Output High Voltage

VCC = Min, IOH = -1.0mA

VCC=3.0V

2.4

--

V

VCC=2.0V

--

15

ICC

(5)

Operating Power Supply

Current

CE = VIL,

IDQ = 0mA, f = FMAX

(4)

VCC=3.0V

--

25

mA

VCC=2.0V

--

0.8

ICC1

Operating Power Supply

Current

CE = VIL,

IDQ = 0mA, f = 1MHz

VCC=3.0V

--

1.0

mA

VCC=2.0V

--

0.5

ICCSB

Standby Current – TTL

CE = VIH,

IDQ = 0mA

VCC=3.0V

--

1.0

mA

VCC=2.0V

--

0.005

0.5

ICCSB1

(6)

Standby Current – CMOS

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

VCC=3.0V

--

0.01

0.7

uA

1. Typical characteristics are at TA=25

OC and not 100% tested.

2. Undershoot: -1.0V in case of pulse width less than 20 ns.

3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.

4. FMAX=1/tRC.

5. ICC (MAX.) is 10mA/20mA at VCC=2.0V/3.0V and TA=70

OC.

6. ICCSB1(MAX.) is 0.3uA/0.4uA at VCC=2.0V/3.0V and TA=70

OC.

DATA RETENTION CHARACTERISTICS (TA = -40

OC to +85OC)

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

VCC for Data Retention

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

1.5

--

V

ICCDR

(3)

Data Retention Current

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

--

0.005

0.4

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

tRC

(2)

--

ns

1. VCC=1.5V, TA=25

OC and not 100% tested.

2. tRC = Read Cycle Time.

3. ICCDR(Max.) is 0.3uA at TA=70

OC.

LOW VCC DATA RETENTION WAVEFORM (CE Controlled)

Data Retention Mode

VCC

tCDR

VCC

tR

VIH

CE≧VCC - 0.2V

VDR≧1.5V

CE

VCC

Similar Part No. - BS62UV256_08

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BS62UV256	240Kb / 10P	Ultra Low Power CMOS SRAM 32K X 8 bit

More results

Similar Description - BS62UV256_08

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BS62UV256	240Kb / 10P	Ultra Low Power CMOS SRAM 32K X 8 bit
Brilliance Semiconducto...	BS62UV256	331Kb / 11P	Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit
Lyontek Inc.	LY62256	212Kb / 14P	32K X 8 BIT LOW POWER CMOS SRAM
Lyontek Inc.	LY62W256	204Kb / 13P	32K X 8 BIT LOW POWER CMOS SRAM
List of Unclassifed Man...	UT62256C	162Kb / 12P	32K X 8 BIT LOW POWER CMOS SRAM
Lyontek Inc.	LY62256	628Kb / 17P	32K X 8 BIT LOW POWER CMOS SRAM
Alliance Semiconductor ...	AS6C62256	2Mb / 12P	32K X 8 BIT LOW POWER CMOS SRAM
List of Unclassifed Man...	UT62256	182Kb / 10P	32K X 8 BIT LOW POWER CMOS SRAM
Lyontek Inc.	LY62L256	203Kb / 13P	32K X 8 BIT LOW POWER CMOS SRAM
Lyontek Inc.	LY62256_1008	292Kb / 14P	32K X 8 BIT LOW POWER CMOS SRAM

More results

BS62UV256 Datasheet(PDF) 3 Page - Brilliance Semiconductor

BS62UV256 Datasheet(HTML) 3 Page - Brilliance Semiconductor

Similar Part No. - BS62UV256_08

Similar Description - BS62UV256_08

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL