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BS616LV4017 Datasheet(PDF) 6 Page - Brilliance Semiconductor |
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BS616LV4017 Datasheet(HTML) 6 Page - Brilliance Semiconductor |
6 / 11 page BS616LV4017 R0201-BS616LV4017 Revision 1.4 Oct. 2008 6 READ CYCLE 2 (1,3,4) READ CYCLE 3 (1, 4) NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE = VIL. 3. Address valid prior to or coincident with CE transition low. 4. OE = VIL. 5. Transition is measured ± 500mV from steady state with CL = 5pF. The parameter is guaranteed but not 100% tested. tOH tRC tOE tBE tBDO DOUT CE OE ADDRESS tCLZ (5) tCHZ (1,5) tOHZ (5) tOLZ tAA LB, UB tBA tCLZ (5) tCHZ (5) DOUT LB, UB CE tBA tACS tBE tBDO |
Similar Part No. - BS616LV4017_08 |
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Similar Description - BS616LV4017_08 |
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