BS62LV256DCP70 datasheet(3/10 Pages) BSI

Part #	BS62LV256DCP70

Description	Very Low Power CMOS SRAM 32K X 8 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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BS62LV256

R0201-BS62LV256

Revision

2.7

Oct.

2008

3

DC ELECTRICAL CHARACTERISTICS (TA = -40

OC to +85OC)

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN.

TYP.(1)

MAX.

UNITS

VCC

Power Supply

2.4

--

5.5

V

VIL

Input Low Voltage

-0.5

(2)

--

0.8

V

VIH

Input High Voltage

2.2

--

VCC+0.3

(3)

V

IIL

Input Leakage Current

VIN = 0V to VCC

--

1

uA

ILO

Output Leakage Current

CE= VIH, or OE = VIH,

VI/O = 0V to VCC

--

1

uA

VOL

Output Low Voltage

VCC = Max, IOL = 0.5mA

--

0.4

V

VOH

Output High Voltage

VCC = Min, IOH = -0.5mA

2.4

--

V

VCC=3.0V

--

25

ICC

(5)

Operating Power Supply

Current

CE = VIL,

IDQ = 0mA, f = FMAX

(4)

VCC=5.0V

--

40

mA

VCC=3.0V

--

1

ICC1

Operating Power Supply

Current

CE = VIL,

IDQ = 0mA, f = 1MHz

VCC=5.0V

--

2

mA

VCC=3.0V

--

1.0

ICCSB

Standby Current – TTL

CE = VIH,

IDQ = 0mA

VCC=5.0V

--

2.0

mA

VCC=3.0V

--

0.01

0.7

ICCSB1

(6)

Standby Current – CMOS

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

VCC=5.0V

--

0.4

5.0

uA

1. Typical characteristics are at TA=25

OC and not 100% tested.

2. Undershoot: -1.0V in case of pulse width less than 20 ns.

3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.

4. FMAX=1/tRC.

5. ICC (MAX.) is 20mA/35mA at VCC=3.0V/5.0V and TA=70

OC.

6. ICCSB1(MAX.) is 0.4uA/4.0uA at VCC=3.0V/5.0V and TA=70

OC.

DATA RETENTION CHARACTERISTICS (TA = -40

OC to +85OC)

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

VCC for Data Retention

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

1.5

--

V

ICCDR

(3)

Data Retention Current

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

--

0.01

0.4

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

tRC

(2)

--

ns

1. Typical characteristics are at VCC=1.5V, TA=25

OC and not 100% tested.

2. tRC = Read Cycle Time.

3. ICCRD(Max.) is 0.3uA at TA=70

OC.

LOW VCC DATA RETENTION WAVEFORM (CE Controlled)

Data Retention Mode

VCC

tCDR

VCC

tR

VIH

CE≧VCC - 0.2V

VDR≧1.5V

CE

VCC

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