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MPSA45G-T92-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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MPSA45G-T92-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page MPSA44/45 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R208-006, G ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage MPSA44 VCBO 500 V MPSA45 400 Collector-Emitter Voltage MPSA44 VCEO 400 V MPSA45 350 Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA Collector Dissipation SOT-89 PC 500 mW TO-92 625 Junction Temperature TJ 125 °C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T J=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage MPSA44 BVCBO IC=100μA, IE=0 500 V MPSA45 400 Collector-Emitter Breakdown Voltage MPSA44 BVCEO IC=1mA, IB=0 400 V MPSA45 350 Emitter-Base Breakdown Voltage BVEBO IE=100μA, IC=0 6 V Collector Cutoff Current MPSA44 ICBO VCB=400V, IE=0 0.1 μA MPSA45 VCB=320V, IE=0 0.1 Collector Cutoff Current MPSA44 ICEO VCE=400V, IB=0 0.5 μA MPSA45 VCE=320V, IB=0 0.5 Emitter Cutoff Current IEBO VEB=4V, IC=0 0.1 μA ON CHARACTERISTICS DC Current Gain (Note) hFE VCE=10V, IC=1mA 40 240 VCE=10V, IC=10mA 82 240 VCE=10V, IC=50mA 45 240 VCE=10V, IC=100mA 40 240 Collector-Emitter Saturation Voltage VCE(SAT) IC=1mA, IB=0.1mA 0.4 V IC=10mA, IB=1mA 0.5 IC=50mA, IB=5mA 0.75 Base-Emitter Saturation Voltage VBE(SAT) IC=10mA, IB=1mA 0.75 V SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product fT VCE=20V,I C=10mA, f=100MHz 50 MHz Output Capacitance COB VCB=20V, IE=0 f=1MHz 7 pF Note: Pulse test: PW<300 μs, Duty Cycle<2% |
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