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PZT2907AL-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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PZT2907AL-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page PZT2907A Preliminary PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R207-023.C ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO -60 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -5 V Collector Current Continuous IC -800 mA Power Dissipation PD 1.3 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Mounted on PCB with 3mm copper at each terminal THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Thermal Resistance θJA 90 ℃ /W Note: Mounted on PCB with 3mm copper at each terminal ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note) BVCEO IC=-10mA, IB=0 - 60 V Collector-Base Breakdown Voltage BVCBO IC=-10μA, IE=0 -60 V Emitter-Base Breakdown Voltage BVEBO IE=-10μA , IC=0 - 5 V Base Cutoff Current IB VCB=-30V, VEB=-0.5V - 50 nA Collector Cutoff Current ICEX VCE=-30V, VBE=-0.5V - 50 nA VCB=-50V, IE=0 - 0.02 μA Collector Cutoff Current ICBO VCB=-50V, IE=0, TA=150°С - 20 μA ON CHARACTERISTICS IC=-0.1mA, VCE=-10V 75 IC=-1.0 mA, VCE=-10V 100 IC=-10 mA, VCE=-10V 100 IC=-150 mA, VCE=-10V (Note) 100 300 DC Current Gain hFE IC=-500 mA, VCE=-10V (Note) 50 IC=-150 mA, IB=-15mA - 0.4 V Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=-500 mA, IB=-50mA - 1.6 V IC=-150 mA, IB=-15mA (Note) - 1.3 V Base-Emitter Saturation Voltage VBE(SAT) IC=-500 mA, IB=-50mA - 2.6 V SMALL SIGNAL CHARACTERISTICS Current Gain – Bandwidth Product fT IC=-50mA, VCE=-20V, f=100MHz 200 MHz Output Capacitance Cob VCB=-10V, IE=0, f=100kHz 8 pF Input Capacitance Cib VEB=-2V, IC=0, f=100kHz 30 pF SWITCHING CHARACTERISTICS Turn-on Time tON 45 ns Delay Time tDLY 10 ns Rise Time tR VCC=30V, IC=-150mA, IB1=-15mA 40 ns Turn-off Time tOFF 100 ns Storage Time tS 80 ns Fall Time tF VCC=6V, IC=-150mA, IB1= IB2=-15mA 30 ns Note: Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0% |
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