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60N06G-TQ2-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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60N06G-TQ2-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 8 page 60N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-121.C ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS = 0 V, IS = 60A 1.6 V Continuous Source Current IS 60 A Pulsed Source Current ISM 120 Reverse Recovery Time trr IS=60A, VGS=0V, dIF/dt=100A/μs 60 ns Reverse Recovery Charge QRR 3.4 μC Note: 1. ISD≤60A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25℃ 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 3. Essentially independent of operating temperature. |
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