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UF3055L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UF3055L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UF3055 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-443.a ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage VDSS 60 V Drain Gate Voltage (RGS = 10MΩ ) VDGR 60 V Continuous ±20 V Gate Source Voltage Non-Repetitive (tP ≤10 ms) VGSS ±30 V Continuous Drain Current (Ta = 25°C) ID 3.0 A Pulsed Drain Current (tP ≤10 µs) IDM 9.0 A Single Pulsed Avalanche Energy (Note 2) EAS 74 mJ Power Dissipation (Ta = 25°C) PD 2 W Junction Temperature TJ 175 °C Strong Temperature TSTG -55 ~ +175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ = 25°C ,VDD = 25V, VGS = 10V, IL = 7.0A, L = 3.0mH, VDS = 60V THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note) θJA 62.5 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain Source Breakdown Voltage (Note 1) VGS= 0V, ID =250µA 60 68 V Temperature Coefficient (Positive) BVDSS 66 mV/°C Drain-Source Leakage Current IDSS VGS=0V, VDS=60V 1.0 µA Gate-Source Leakage Current IGSS VGS = ±20 V, VDS =0V ±100 nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS=VDS, ID =250µA 2.0 3.0 4.0 V Temperature Coefficient (Negative) VGS(TH) 6.6 mV/°C Static Drain-Source On-State Resistance RDS(ON) VGS =10 V, ID =1.5A 88 110 mΩ Static Drain-to-Source On-Resistance VDS(ON) VGS =10 V, ID =3A 0.27 0.40 V Forward Tran conductance gFS VDS=8.0V, ID=1.7A 3.2 M DYNAMIC PARAMETERS Input Capacitance CISS 324 455 pF Output Capacitance COSS 35 50 pF Reverse Transfer Capacitance CRSS VGS =0 V, VDS =25 V, f=1.0MHz 110 155 pF SWITCHING PARAMETERS (Note 2) Turn-ON Delay Time tD(ON) 9.4 20 ns Turn-ON Rise Time tR 14 30 ns Turn-OFF Delay Time tD(OFF) 21 45 ns Turn-OFF Fall-Time tF VGS=10V, VDD=30V, ID =3.0A , RG =9.1Ω (Note 1) 13 30 ns Total Gate Charge QG 10.6 22 nC Gate-Source Charge QGS 1.9 nC Gate-Drain Charge QGD VGS =10V, VDS =48V, ID =3.0A (Note 1) 4.2 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V, IS=3.0A 0.89 1.0 V tRR 30 ns tA 22 ns Body Diode Reverse Recovery Time tB 8.6 ns Body Diode Reverse Recovery Charge QRR VGS=0V, IS=3.0A, dI/dt=100 A/μs (Note 1) 0.04 nC Notes: 1. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤2.0%. 2. Switching characteristics are independent of operating junction temperatures. |
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