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CPC3701C Datasheet(PDF) 2 Page - Clare, Inc.

Part # CPC3701C
Description  Vertical DMOS FET
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Manufacturer  CLARE [Clare, Inc.]
Direct Link  http://www.clare.com
Logo CLARE - Clare, Inc.

CPC3701C Datasheet(HTML) 2 Page - Clare, Inc.

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www.clare.com
2
R02
CPC3701
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Absolute Maximum Ratings @ 25ºC
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter
Ratings
Units
Drain-to-Source Voltage
60
V
P
Gate-to-Source Voltage
±15
V
P
Pulsed Drain Current
1
A
Total Package Dissipation 1
1.1
W
Operational Temperature
-55 to +125
ºC
Storage Temperature
-55 to +125
ºC
1 Mounted on 1"x1" FR4 board.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-to-Source Breakdown Voltage
V
(BR)DSX
V
GS= -5V, ID=100µA
60
-
-
V
Gate-to-Source Off Voltage
V
GS(off)
V
DS= 5V, ID=1A
-0.8
-
-2.9
V
Change in V
GS(off) with Temperature
dV
GS(off) /dT
V
DS= 5V, ID=1A
-
-
4.5
mV/ºC
Gate Body Leakage Current
I
GSS
V
GS=±15V, VDS=0V
-
-
100
nA
Drain-to-Source Leakage Current
I
D(off)
V
GS= -5V, VDS=60V
-
-
1
µA
V
GS= -5V, VDS=40V, TA=125ºC
-
-
1
mA
Saturated Drain-to-Source Current
I
DSS
V
GS= 0V, VDS=15V
600
-
-
mA
Static Drain-to-Source On-State Resistance
R
DS(on)
V
GS= 0V, ID=300mA
--
1
Change in R
DS(on) with Temperature
dR
DS(on) /dT
-
-
1.1
%/ºC
Turn-On Delay Time
t
d(on)
V
DS= 25V
I
D= 300mA
V
GS= 0V to -10V
R
gen= 50
-
-70
ns
Rise Time
t
r
-40
Turn-Off Delay Time
t
d(off)
-50
Fall Time
t
f
-
150
Source-Drain Diode Voltage Drop
V
SD
V
GS= -5V, ISD=300mA
-
0.6
1.8
V
Thermal Resistance (Junction to Ambient)
RJA
-
-
90
-
ºC/W
Switching Waveform & Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
RL
OUTPUT
D.U.T.
ton
td(on)
toff
td(off)
INPUT
INPUT
OUTPUT
0V
V
DS
Rgen
0V
-10V
tf
tr


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