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PZTA64 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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PZTA64 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page Semiconductor Group 2 PZTA 63 PZTA 64 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. V Collector-emitter breakdown voltage IC = 100 µA V(BR)CES 30 – – nA µA Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 ˚C ICB0 – – – – 100 10 Unit Values Parameter Symbol min. typ. max. DC characteristics Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EB0 10 – – V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VCEsat – – 1.5 – DC current gain IC = 10 mA, VCE = 5 V PZTA 63 PZTA 64 IC = 100 mA, VCE = 5 V PZTA 63 PZTA 64 hFE 5000 10000 10000 20000 – – – – – – – – MHz Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT 125 – – AC characteristics Collector-base breakdown voltage IC = 100 µA, IB = 0 V(BR)CB0 30 – – nA Emitter-base cutoff current VEB = 10 V, IC = 0 IEB0 – – 100 Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VBEsat – – 2.0 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. |
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