SEMICONDUCTOR

RoHS

RoHS

Page2of5

N

High Power Products

ell

FORWARD CONDUCTION

PARAMETER

SYMBOL

UNIT

THERMAL AND MECHANICAL SPECIFCATIONS

16D(R)Series

TEST CONDITIONS

VALUES

Maximumaverageforwardcurrent

atcasetemperature

180 conduction,halfsinewave

°

MaximumRMSforwardcurrent

16

A

140

ºC

25

K/W

Maximumon-repetitivepeak

reversepower

10 ssquarepulse,T =T maximum

J

J

Maximumpeak,one-cycleforward,

non-reptitivesurgecurrent

t

ms

= 10

t

ms

= 8.3

t

ms

= 10

t

ms

t

ms

=10

t

ms

= 8.3

t

ms

=10

t

ms

=8.3

Novoltage

reapplied

reapplied

Novoltage

reapplied

reapplied

I t

2

Sinusoidalhalfwave,

initialT =T maximum

J

J

15

350

370

295

310

612

558

435

395

A s

2

A

A

6125

t=0.1to10ms,novoltagereapplied

I

t

Maximuml²tforfusing

Maximuml² tforfusing

√

Maximumforwardvoltagedrop

1.25

A

s

V

l

=50A,T =25˚C,t =400µsrectangularwave

pk

J

p

(1) Avalanche only for avalanche version, all other parameters the same as 16D

Note

PARAMETER

SYMBOL

UNITS

TEST CONDITIONS

VALUES

Maximumjunctionoperating

temperaturerange

Maximumstoragetemperaturerange

-65to175

-65to200

ºC

0.5

K/W

Maximumthermalresistace,

junctiontocase

Maximumthermalresistance

casetoheatsink

1.6

(13)

(10)

6

0.21

(lbfin)

·

Nm

·

Allowablemountingtorque

Approximateweight

Casestyle

DO-203AA(DO-4)

(lbfin)

·

Nm

·

g

oz.

Notlubricatedthreads

Lubricatedthreads

Mountingsurface,smooth,flatandgreased

DCoperation

Seedimensions-linkattheendofdatasheet

(1)

1.5

+0

-10%

1.2

+0

-10%

R

CONDUCTION

thJC

CONDUCTION ANGEL

SINUSOIDAL CONDUCTION

RECTANGULARCONDUCTION

UNITS

TESTCONDUCTIONS

K/W

180˚

120˚

90˚

60˚

30˚

0.31

0.38

0.49

0.72

1.20

0.23

0.40

0.54

0.75

1.21

T =T maximum

J

J

• The table above shows the increment of thermal resistance R

when devices

thJC

Note

operate at different conduction angles than DC