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N-HFA16TB120 Datasheet(PDF) 5 Page - Nell Semiconductor Co., Ltd |
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N-HFA16TB120 Datasheet(HTML) 5 Page - Nell Semiconductor Co., Ltd |
5 / 6 page SEMICONDUCTOR RoHS RoHS Page 5 of 6 Nell High Power Products N-HFA16TB120 Fig.9 Reverse Recovery Parameter Test Circuit Fig.10 Reverse Recovery Waveform and Definitions IRFP250 D.U.T. L = 70 µH V R = 200 V 0.01Ω G D S dIF/dt adjust Q rr 0.5 IRRM dI (rec)M/dt 0.75 I RRM I RRM t rr t b t a I F dI F/dt 0 (1) (2) (3) (4) (5) (1) dI /dt - rate of change of current F through zero crossing (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured rr from zero crossing point of negative going I to point where a line passing F through 0.75 I RRM and 0.50 IRRM extrapolated to zero current. (4) Q - area under curve defined by t rr rr IRRM x I rr RRM 2 Q = rr (5) dI / - dt peak rate of change of (rec)M current during tbportion of trr and t www.nellsemi.com |
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