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BQ24166RGET Datasheet(PDF) 5 Page - Texas Instruments |
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BQ24166RGET Datasheet(HTML) 5 Page - Texas Instruments |
5 / 35 page ILIM ILIM K I = R INL IM bq24165 bq24166 bq24167 www.ti.com SLUSAP4A – DECEMBER 2011 – REVISED MARCH 2012 ELECTRICAL CHARACTERISTICS (continued) Circuit of Figure 1, VSUPPLY = VUSB or VIN (whichever is supplying the IC), VUVLO < VSUPPLY < VOVP and VSUPPLY > VBAT+VSLP, mm TJ = 0°C–125°C and TJ = 25ºC for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Maximum input current limit programmable IINLIM 1000 2500 mA range for IN input KILIM Maximum input current factor for IN input 238 251 264 A Ω VIN_DPM threshold programmable range for VIN_DPM_IN 4.2 10 V IN Input VDPM threshold 1.18 1.2 1.22 V USB100, USB150 4.175 4.28 4.36 VIN_DPM_USB VIN_DPM threshold for USB Input V USB500, USB800, USB900, 1.5A current limit selected 4.35 4.44 4.52 VDRV Internal bias regulator voltage 5 5.2 5.45 V IDRV DRV Output current 10 mA DRV Dropout voltage VDO_DRV ISUPPLY = 1 A, VSUPPLY = 5 V, IDRV = 10 mA 450 mV (VSUPPLY – VDRV) VUVLO Under-voltage lockout threshold voltage VIN or VUSB rising, 150mV Hysteresis 3.6 3.8 4.0 V Sleep-mode entry threshold, VSUPPLY- VSLP 2.0 V ≤ VBAT ≤ VOREG, VIN falling 0 40 100 mV VBAT VSLP_EXIT Sleep-mode exit hysteresis 2.0 V ≤ VBAT ≤ VOREG 40 100 175 mV Deglitch time for supply rising above Rising voltage, 2-mV over drive, tRISE = 100 ns 30 ms VSLP+VSLP_EXIT USB, VUSB Rising 6.3 6.5 6.7 VOVP Input supply OVP threshold voltage V IN, VIN Rising 10.3 10.5 10.7 VOVP(HYS) VOVP hysteresis Supply falling from VOVP 100 mV 1.025 × 1.05 × 1.075 × VBOVP Battery OVP threshold voltage VBAT threshold over VOREG to turn off charger during charge V VBATREG VBATREG VBATREG VBATUVLO Battery UVLO threshold voltage 2.5 V ILIMIT Cycle by Cycle current limit 4.1 4.9 5.6 A TSHUTDWN Thermal shutdown 10C Hysteresis 165 C TREG Thermal regulation threshold 120 C Safety Timer 324 360 396 min IUSB_, CE_, PG, CHG VIH Input high threshold 1.3 V VIL Input low threshold 0.4 V IIH High-level leakage current VCHG = VPG = 5V 1 µA VOL Low-level output saturation voltage IO = 10 mA, sink current 0.4 V PWM CONVERTER IIN_LIMIT = 500 mA, Measured from VUSB to PMIDU 95 175 Internal top reverse blocking MOSFET on- m Ω resistance IIN_LIMIT = 500 mA, Measured from VIN to PMIDI 45 80 Measured from PMIDU to SW 100 175 Internal top N-channel Switching MOSFET m Ω on-resistance Measured from PMIDI to SW 65 110 Internal bottom N-channel MOSFET on- Measured from SW to PGND 65 115 resistance fOSC Oscillator frequency 1.35 1.50 1.65 MHz DMAX Maximum duty cycle 95% DMIN Minimum duty cycle 0 BATTERY-PACK NTC MONITOR (bq24166, bq24167) VHOT High temperature threshold VTS falling 29.7 30 30.5 %VDRV VHYS(HOT) Hysteresis on high threshold VTS rising 1 VWARM Warm temperature threshold VTS falling, bq24167 only 37.9 38.3 39.6 %VDRV VHYS(WARM) Hysteresis on high threshold VTS rising, bq24167 only 1 VCOOL Cool temperature threshold VTS rising, bq24167 only 56.0 56.5 56.9 %VDRV VHYS(COOL) Hysteresis on low threshold VTS falling, bq24167 only 1 VCOLD Low temperature threshold VTS rising 59.5 60 60.4 %VDRV VHYS(COLD) Hysteresis on low threshold VTS falling 1 TSOFF TS Disable threshold VTS rising, 2%VDRV Hysteresis 70 73 %VDRV tDGL(TS) Deglitch time on TS change 50 ms Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): bq24165 bq24166 bq24167 |
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