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TLV71725PDBVT Datasheet(PDF) 10 Page - Texas Instruments |
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TLV71725PDBVT Datasheet(HTML) 10 Page - Texas Instruments |
10 / 23 page TLV717xx TLV717xxP SBVS176A – OCTOBER 2011 – REVISED APRIL 2012 www.ti.com DROPOUT VOLTAGE The TLV717xx uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output resistance is the RDS(ON) of the PMOS pass element. VDO scales approximately with output current because the PMOS device behaves like a resistor in dropout. As with any linear regulator, PSRR and transient response are degraded as (VIN – VOUT) approaches dropout. TRANSIENT RESPONSE As with any regulator, increasing the size of the output capacitor reduces over- and undershoot magnitude but increases the duration of the transient response. UNDERVOLTAGE LOCKOUT (UVLO) The TLV717xx uses an undervoltage lockout circuit (UVLO = 1.6 V) to keep the output shut off until the internal circuitry operates properly. POWER DISSIPATION The ability to remove heat from the die is different for each package type, presenting different considerations in the printed circuit board (PCB) layout. The PCB area around the device that is free of other components moves the heat from the device to ambient air. Performance data for JEDEC-low and high-K boards are given in the Thermal Information table. Using heavier copper increases the effectiveness in removing heat from the device. The addition, plated through-holes to heat-dissipating layers also improves heatsink effectiveness. Power dissipation depends on input voltage and load conditions. Power dissipation (PD) is equal to the product of the output current and the voltage drop across the output pass element, as shown in Equation 1. PD = (VIN – VOUT) × IOUT (1) 10 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated Product Folder Link(s): TLV717xx TLV717xxP |
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