TPD1E10B09

SLLSEB0A – FEBRUARY 2012 – REVISED MARCH 2012

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

MIN

MAX

UNIT

Operating temperature range

-40

125

°C

Storage temperature

–65

155

°C

IEC 61000-4-2 contact ESD

±20

kV

IEC 61000-4-2 air-gap ESD

±20

kV

Peak pulse current (tp = 8/20

μs)

4.5

A

Peak pulse power (tp = 8/20

μs)

90

W

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

Reverse stand-off voltage

Pin 1 to 2 or Pin 2 to 1

9

V

Leakage current

Pin 1 = 5 V, Pin 2 = 0 V

100

nA

(1)

13

Clamp voltage with ESD strike on pin 1, pin 2

VClamp1,2

V

grounded.

(1)

17

(1)

13

Clamp voltage with ESD strike on pin 2, pin 1

VClamp2,1

V

grounded.

(1)

20

0.5

Dynamic resistance

Ω

0.5

IO capacitance

10

pF

Break-down voltage, pin 1 to pin 2

9.5

V

Break-down voltage, pin 2 to pin 1

9.5

V

(1)

Non-repetitive current pulse 8/20 us exponentially decaying waveform according to IEC61000-4-5

(2)

2

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