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SMBT6427 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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SMBT6427 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 4 page  Semiconductor Group 1 NPN Silicon Darlington Transistor SMBT 6427 5.91 Maximum Ratings Type Ordering Code (tape and reel) Marking Package1) Pin Configuration SMBT 6427 Q68000-A8320 s1V SOT-23 B E C 1 2 3 Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Collector current IC 500 mA Total power dissipation, TS =74 ˚C Ptot 360 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 280 K/W Junction - soldering point Rth JS ≤ 210 Emitter-base voltage VEB0 12 Peak collector current ICM 800 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. q For general amplifier applications q High collector current q High current gain |
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Similar Description - SMBT6427 |
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