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SMBT6429 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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SMBT6429 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 6 page Semiconductor Group 2 SMBT 6428 SMBT 6429 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA V Collector-emitter breakdown voltage IC = 1 mA SMBT 6428 SMBT 6429 V(BR)CE0 50 45 – – – – Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10 µA SMBT 6428 SMBT 6429 V(BR)CB0 60 55 – – – – Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 6–– Emitter-base cutoff current VEB = 5 V, IC = 0 IEB0 ––10 nA µA Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C ICB0 – – – – 10 10 – DC current gain IC = 10 µA, VCE = 5 V SMBT 6428 SMBT 6429 IC = 100 µA, VCE = 5 V SMBT 6428 SMBT 6429 IC = 1 mA, VCE = 5 V SMBT 6428 SMBT 6429 IC = 10 mA, VCE = 5 V SMBT 6428 SMBT 6429 hFE 250 500 250 500 250 500 250 500 – – – – – – – – – – 650 1250 – – – – V VCEsat – – – – 0.2 0.6 Base-emitter voltage IC = 1 mA, VCE = 5 V VBE(on) 0.56 – 0.66 nA Collector cutoff current VCE = 30 V, IB = 0 ICE0 – – 100 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2%. |
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