SMBT6429 datasheet(2/6 Pages) SIEMENS

Part #	SMBT6429

Description	NPN Silicon Transistors

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

2

SMBT 6428

SMBT 6429

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

V

Collector-emitter breakdown voltage

IC = 1 mA

SMBT 6428

SMBT 6429

V(BR)CE0

50

45

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 10

µA

SMBT 6428

SMBT 6429

V(BR)CB0

60

55

–

Emitter-base breakdown voltage

IE = 1

µA

V(BR)EB0

6––

Emitter-base cutoff current

VEB = 5 V, IC = 0

IEB0

––10

nA

µA

Collector-base cutoff current

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 150 ˚C

ICB0

–

10

–

DC current gain

IC = 10

µA, VCE = 5 V

SMBT 6428

SMBT 6429

IC = 100

µA, VCE = 5 V

SMBT 6428

SMBT 6429

IC =

1 mA, VCE = 5 V

SMBT 6428

SMBT 6429

IC = 10 mA, VCE = 5 V

SMBT 6428

SMBT 6429

hFE

250

500

250

500

250

500

250

500

–

650

1250

–

V

VCEsat

–

0.2

0.6

Base-emitter voltage

IC = 1 mA, VCE = 5 V

VBE(on)

0.56

–

0.66

nA

Collector cutoff current

VCE = 30 V, IB = 0

ICE0

–

100

1)

Pulse test conditions: t

≤ 300 µs, D ≤ 2%.

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SMBT6429 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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