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ELM16408EA-S Datasheet(PDF) 1 Page - ELM Technology Corporation

Part # ELM16408EA-S
Description  Single N-channel MOSFET
Download  4 Pages
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Manufacturer  ELM-TECH [ELM Technology Corporation]
Direct Link  http://www.elm-tech.com
Logo ELM-TECH - ELM Technology Corporation

ELM16408EA-S Datasheet(HTML) 1 Page - ELM Technology Corporation

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1
ELM16408EA-S
■General description
■Features
■Maximum absolute ratings
■Thermal characteristics
Parameter
Symbol
Typ.
Max.
Unit
Note
Maximum junction-to-ambient
t≤10s
Rθja
47.5
62.5
°C/W
1
Maximum junction-to-ambient
Steady-state
74.0
110.0
°C/W
Maximum junction-to-lead
Steady-state
Rθjl
37.0
40.0
°C/W
3
Parameter
Symbol
Limit
Unit
Note
Drain-source voltage
Vds
20
V
Gate-source voltage
Vgs
±
12
V
Continuous drain current
Ta=25°C
Id
8.8
A
1
Ta=70°C
7.0
Pulsed drain current
Idm
40
A
2
Power dissipation
Ta=25°C
Pd
2.00
W
Ta=70°C
1.28
Junction and storage temperature range
Tj, Tstg
-55 to 150
°C
ELM16408EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection is included.
• Vds=20V
• Id=8.8A (Vgs=10V)
• Rds(on) < 18mΩ (Vgs=10V)
• Rds(on) < 20mΩ (Vgs=4.5V)
• Rds(on) < 25mΩ (Vgs=2.5V)
• Rds(on) < 32mΩ (Vgs=1.8V)
• ESD Rating : 2000V HBM
4 -
Single N-channel MOSFET
Pin No.
Pin name
1
DRAIN
2
DRAIN
3
GATE
4
SOURCE
5
DRAIN
6
DRAIN
1
3
5
6
2
4
■Pin configuration
■Circuit
SOT-26(TOP VIEW)
G
D
S


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